Fet Technology and ApplicationThis book provides the reader with some insights into the many styles of field effect transistors (FETs) being used. It offers a rudimentary understanding of their operation and performance. The book explains the complex terminology that defines the various FET parameters. |
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Índice
| 1 | |
| 25 | |
| 43 | |
| 61 | |
23 | 88 |
24 | 98 |
29 | 105 |
Parameter Action | 111 |
How to Read a Data Sheet and Understand What | 163 |
The Many Ways to Power Up FETs | 195 |
Where SmallSignal FETs Are Found | 219 |
Where LargeSignal FETs Are Found | 237 |
Amplifiers | 246 |
37 | 255 |
ndex | 260 |
240 | 266 |
Palavras e frases frequentes
achieve amplifier analog switches applications biasing bipolar transistor body-drain diode breakdown voltage carriers Chapter chip temperature circuit Ciss CMOS Common-Source Crss curves cutoff voltage depletion region depletion-mode FET depletion-mode MOSFET derating device diffusion DMOS drain current ID drain voltage drain-gate Ds(on electrical electrons enhancement-mode MOSFET epitaxy frequency gate bias gate charge gate drive gate oxide gate voltage gate-drain gate-source voltage gate-to-source gs(off heatsink ID(off identifies IDss IGBT increase input capacitance JEDEC JFET data sheet leakage current Miller effect n-channel noise figure offer Output Characteristic VGS(off parameter parasitic capacitances performance pinch-off polarity potential power bipolar transistor power dissipation power DMOSFET power FET pulse reverse recovery rises safe operating area semiconductor shown in Figure signal silicon small-signal JFET specifications substrate symbol thermal resistance threshold voltage tion transconductance turn-OFF turn-ON V(BR Vos(off VSAT zero
Passagens conhecidas
Página 193 - MOS field-effect transistors and integrated circuits" John Wiley & Sons, New York, 1973. 07. W. Fichtner "Physics and simulation of small MOS devices
Página 114 - Transistors, copyright © 1971, John Wiley & Sons. Reprinted by permission of John Wiley & Sons, Inc.) practice we can expect to withstand about 6 x 10^ V/cm separation.
Página 251 - Baliga, B. Jayant, and Chen, Dan Y., Eds. (1984). Power Transistors: Device Design and Applications, IEEE Press, New York.
Página 90 - ... whether the concentration of recombination centers in the diffused region is small or large compared to that in the base region. This is unlike the situation in a step junction where the injection efficiency is initially high and then degrades as the current increases. 1.2.3 PN Junction Capacitance From Poisson's equation the reverse bias space-charge capacitance per unit area of a step junction is given by...
Página 225 - FET's admittance parameters, we discover that the input resistance varies inversely with the square of the frequency, whereas the input reactance is inversely proportional to frequency.
Página 90 - Poisson's equation, the reverse bias space-charge capacitance per unit area of an abrupt -junction diode is an inverse function of the square root of the junction voltage...
Referências a este livro
Detection of Low-Level Optical Signals: Photodetectors, Focal Plane Arrays ... M.A. Trishenkov Pré-visualização limitada - 1997 |
Informação bibliográfica
| Título | Fet Technology and Application Volume 54 de Electrical and Computer Engineering |
| Autor | E. S. Oxner |
| Edição | ilustrada |
| Editora | CRC Press, 1988 |
| ISBN | 0824780507, 9780824780500 |
| Número de páginas | 288 páginas |
| Exportar citação | BiBTeX EndNote RefMan |