Micro- and Nanoelectronics: Emerging Device Challenges and Solutions

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Tomasz Brozek
CRC Press, 19/12/2017 - 383 páginas
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Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text:

  • Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling
  • Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties
  • Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches
  • Describes the latest developments in carbon nanotubes, iii-v devices structures, and more

Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.

 

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Palavras e frases frequentes

Ag2S anisotropy architecture atomic switch beyond-CMOS devices bias BiCMOS bulk capacitance capacitors carbon nanotube CCDLTS channel circuit CMOS CMOS technology conduction band contact resistance December defects demonstrated density Devices Meeting IEDM diffusion dopant doping effect electrical Electron Devices Meeting energy epitaxial FDSOI FinFET fully depleted function gate dielectric gate length gate stack graphene IEEE International Electron III–V InAs increase input integration interconnects interdiffusion interface International Electron Devices layer leakage Lett logic gates magnetic tunnel junctions magnetization materials memristive memristor metal mobility MOSFETs multiferroic nanomagnet Nanotechnology nanowire NBTI neuromorphic nFET nm node nMOS nonvolatile operation oxide PBTI performance pFET Phys pMOS reliability reprogrammable scaling semiconductor short-channel shown in Figure Si–Ge interdiffusion SiGe silicon simulations source/drain spintronic SRAM strain stress structure substrate Symposium on VLSI synapse Technical Digest technology node temperature thermal thickness threshold voltage transistor traps tunneling VLSI Technology wafer width

Acerca do autor (2017)

Tomasz Brozek is a technical fellow at PDF Solutions, San Jose, California, USA, where he is responsible for advanced silicon technology characterization, diagnostic methods development, and early yield ramp of integrated circuits. He holds an MS EE and a Ph.D in physics. His doctorate research at the Institute of Semiconductor Physics in Kiev, Ukraine focused on radiation effects and degradation in microelectronic MOS systems. Previously he taught and conducted research at Warsaw University of Technology, Poland and the University of California, Los Angeles, USA, and worked at Motorola R&D organizations in Texas and Arizona, USA.

Informação bibliográfica

QR code for Micro- and Nanoelectronics
TítuloMicro- and Nanoelectronics: Emerging Device Challenges and Solutions
Devices, Circuits, and Systems
EditorTomasz Brozek
EditoraCRC Press, 2017
ISBN1351831348, 9781351831345
Número de páginas383 páginas
  
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