Nanometer CMOS

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Pan Stanford Publishing, 28/02/2010 - 340 páginas
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This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.

 

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Índice

Chapter One The Evolution of Silicon Electronics
1
Chapter Two MOSFET Theory
35
Chapter Three Nanoscale MOSFETs
129
Chapter Four MOSFETs for RF Applications
219
Direitos de autor

Outras edições - Ver tudo

Nanometer CMOS
Juin J. Liou,Frank Schwierz,Hei Wong
Pré-visualização limitada - 2017
Nanometer CMOS
Juin J. Liou,Frank Schwierz,Hei Wong
Pré-visualização limitada - 2010
Nanometer CMOS
Juin J. Liou,Frank Schwierz,Hei Wong
Pré-visualização limitada - 2017

Palavras e frases frequentes

applied body thickness bulk MOSFETs C′oxeff capacitance channel length circuits CMOS CMOS technology conduction band depletion DIBL dielectric constant dopant doping double-gate MOSFETs drain current electron concentration Electron Device Lett electron mobility FETs Figure films FinFET frequency fT and fmax function GaAs pHEMTs gate dielectric gate length gate oxide gate voltage gate width gate-source HEMTs high-k dielectrics IEDM IEEE IEEE Electron Device IEEE Trans III-V increase InP HEMTs interface inversion layer ITRS lithography metal gates mHEMTs Moore’s Law multiple-gate MOSFETs nanometer nanometer MOSFETs nanoscale nanowire noise figure on-current output power oxide thickness p-bulk MOS structure p-type performance plasma polysilicon potential quantum mechanical resistance RF MOSFETs Schwierz sheet concentration short-channel effects shown in Fig shows SiGe silicon simulation single-gate SiO2 source and drain space-charge region strained strained silicon substrate surface Tech thin threshold voltage tri-gate MOSFET velocity wafer

Acerca do autor (2010)

Dr. Frank Schwierz is head of the RF & Nanoelectronics Research Group at Technische Universität (TU) Ilmenau, Germany.

Informação bibliográfica

QR code for Nanometer CMOS
TítuloNanometer CMOS
AutoresFrank Schwierz, Hei Wong, Juin J. Liou
EditoresFrank Schwierz, Hei Wong, Juin J. Liou
Ediçãoilustrada
EditoraPan Stanford Publishing, 2010
ISBN9814241083, 9789814241083
Número de páginas340 páginas
  
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